Volume 13 (2022)
Volume 12 (2021)
Volume 11 (2020)
Volume 10 (2019)
Volume 9 (2018)
Volume 8 (2017)
Volume 7 (2016)
Volume 6 (2015)
Volume 5 (2014)
Volume 4 (2013)
Volume 3 ( 2012)
Volume 2 (2011)
Volume 1 (2010)
1. Defect Analysis And Performance Evaluation Of P-type Epitaxial GaAs Layer On Ge Substrate For GaAs/Ge Based Advanced Device

Goutam Kumar Dalapati; Vignesh Suresh; Sandipan Chakraborty; Chandreswar Mahata; Yi Ren; Thirumaleshawara Bhat; Sudhiranjan Tripathy; Taeyoon Lee; Lakshmi Kanta Bera; Dongzhi Chi

Volume 7, Issue 7 , July 2016, , Pages 517-524

Abstract
  The structural defects and formation of native oxides during thermal treatment on p-type epitaxial-GaAs/Ge have been investigated using spectroscopic measurements and electrical characterization. The performance of epi-GaAs based device depends on the interface quality between epi-GaAs and gate oxide ...  Read More

2. Impact Of Oxygen Diffusion On The Performance Of HfO2/GaAs Metal-oxide-semiconductor Field-effect-transistors

Anindita Das; Sanatan Chattopadhyay; Goutam Kumar Dalapati

Volume 7, Issue 2 , February 2016, , Pages 123-129

Abstract
  In the current work, electrical performance of n-channel GaAs MOSFETs with HfO2 gate dielectrics has been investigated by considering the impact of oxygen diffusion from gate dielectric layer. Initially, the HfO2/GaAs MOS capacitors are fabricated and its relevant process recipe has been simulated. The ...  Read More

3. Calculation Of Lattice Thermal Conductivity Of Suspended GaAs nanobeams: Effect Of Size Dependent Parameters

S. M. Mamand; M. S. Omar; A. J. Muhammed

Volume 3, Issue 6 , December 2012, , Pages 449-458

Abstract
  Theoretical calculations of the magnitude and temperature variation of the measured thermal conductivity of undoped and doped GaAs nanobeams will present. The calculations have been performed by employing modified Callaway’s theoretical model. In the model, both longitudinal and transverse modes ...  Read More