Volume 15 (2024)
Volume 14 (2023)
Volume 13 (2022)
Volume 12 (2021)
Volume 11 (2020)
Volume 10 (2019)
Volume 9 (2018)
Volume 8 (2017)
Volume 7 (2016)
Volume 6 (2015)
Volume 5 (2014)
Volume 4 (2013)
Volume 3 ( 2012)
Volume 2 (2011)
Volume 1 (2010)
Copper Oxide Nano-particles Film On Glass By Using Sputter And Chemical Bath Deposition Technique

Avishek Das; Ajay Kushwaha; Nakul Raj Bansal; Vignesh Suresh; Sanghamitra Dinda; Sanatan Chattopadhyay; Goutam Kumar Dalapati

Volume 7, Issue 8 , August 2016, , Pages 600-603

https://doi.org/10.5185/amlett.2016.6433

Abstract
  In the present work, cupric oxide (CuO) nanoparticle (NP) thin films were synthesized on glass by combination of sputter and chemical bath deposition technique. The CuO seeds were deposited by using radio frequency (RF) sputter technique at room temperature. CuO nanoparticles were prepared by chemical ...  Read More

Defect Analysis And Performance Evaluation Of P-type Epitaxial GaAs Layer On Ge Substrate For GaAs/Ge Based Advanced Device

Goutam Kumar Dalapati; Vignesh Suresh; Sandipan Chakraborty; Chandreswar Mahata; Yi Ren; Thirumaleshawara Bhat; Sudhiranjan Tripathy; Taeyoon Lee; Lakshmi Kanta Bera; Dongzhi Chi

Volume 7, Issue 7 , July 2016, , Pages 517-524

https://doi.org/10.5185/amlett.2016.6439

Abstract
  The structural defects and formation of native oxides during thermal treatment on p-type epitaxial-GaAs/Ge have been investigated using spectroscopic measurements and electrical characterization. The performance of epi-GaAs based device depends on the interface quality between epi-GaAs and gate oxide ...  Read More

Impact Of Oxygen Diffusion On The Performance Of HfO2/GaAs Metal-oxide-semiconductor Field-effect-transistors

Anindita Das; Sanatan Chattopadhyay; Goutam Kumar Dalapati

Volume 7, Issue 2 , February 2016, , Pages 123-129

https://doi.org/10.5185/amlett.2016.6277

Abstract
  In the current work, electrical performance of n-channel GaAs MOSFETs with HfO2 gate dielectrics has been investigated by considering the impact of oxygen diffusion from gate dielectric layer. Initially, the HfO2/GaAs MOS capacitors are fabricated and its relevant process recipe has been simulated. The ...  Read More