S.R. Mane; P.S. Patil;P. N. Bhosale; R. M. Mane
Abstract
Thallium (I) doped tungsten heteropolyoxometalate (HPOM) combinatorial thin films have been deposited on glass substrate using simple chemical bath deposition technique. The deposited films were annealed at 100 o C, 150 o C, 200 o C and 250 o C. These annealed thin films were characterized by using SEM, ...
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Thallium (I) doped tungsten heteropolyoxometalate (HPOM) combinatorial thin films have been deposited on glass substrate using simple chemical bath deposition technique. The deposited films were annealed at 100 o C, 150 o C, 200 o C and 250 o C. These annealed thin films were characterized by using SEM, EDAX, AFM, FT-IR, XRD and TGA-DTA techniques for their structural properties. SEM and EDAX results shows that, tungsten HPOM material is polycrystalline in nature and Tl (I) is intercalated in phosphotungustate anion. AFM studies on the films annealed at different temperatures reveal that the surface roughness increases with the increase in annealing temperature, suggesting an increase of crystallization with temperature. FT-IR study confirms the well formation of heteropolyoxometalate material under investigation. Various structural parameters such as lattice constants, crystallite size and grain size have been calculated and they are found temperature dependent. The lattice constant, crystallite size and grain size of tungsten HPOM material increases with increase in temperature. XRD pattern of annealed thin films shows better crystanality of tungsten HPOM material having simple cubic spinel structure. The TGA-DTA study revealed that, Tl3 (PW12 O40) material is thermally stable up to 265.12 o C.
Manauti M. Salunkhe; S. M. Patil; R. M. Mane; S. V. Patil; P. N. Bhosale
Abstract
Molybdenum bismuth telluride thin films have been prepared on clean glass substrate using Arrested Precipitation Technique (APT) which is based on self organized growth process. As deposited MoBi2Te5 thin films were dried in constant temperature oven at 110 o C and further characterized for their optical, ...
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Molybdenum bismuth telluride thin films have been prepared on clean glass substrate using Arrested Precipitation Technique (APT) which is based on self organized growth process. As deposited MoBi2Te5 thin films were dried in constant temperature oven at 110 o C and further characterized for their optical, structural, morphological, compositional and electrical analysis. Optical absorption spectra recorded in the wavelength range 300-800 nm showed band gap (Eg) 1.44 eV. X-ray diffraction pattern and scanning electron microscopic images showed that MoBi2Te5 thin films were nanocrystalline having rhombohedral structure. The energy dispersive spectroscopic analysis of as deposited thin films showed close agreements in theoretical and experimental atomic percentages of Mo 4+ , Bi 3+ and Te 2- and suggest that the chemical formula MoBi2Te5 assigned to molybdenum bismuth telluride thin film material is confirm. The resistivity and thermoelectric power measurement studies showed that the films were semiconducting with n-type conduction. The fill factor and conversion efficiency (η) are determined by fabricating PEC cell using MoBi2Te5 thin film electrode. In this article we report the optostructural, morphological, compositional and thermoelectric characteristics of nanocrystalline MoBi2Te5 thin films to check its suitability as photoelectrode in PEC Cell.
