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Abstract
In order to improve the properties of the graphene transparent conductive film, we developed a process of O2 plasma patterning graphene using a metal mesh as an etching mask. The CVD growth conditions of high-quality multilayer graphene samples consisting of 400 layers or more were found using Ni foil, and the R sheet = 3.4 ± 0.6 Ω/sq. was achieved. The best performance of graphene micromesh based transparent conductive films so far was R sheet = 22.2 Ω/sq. at T = 47.1 ± 1.9 %. According to theoretical calculations based on the combined resistance of the two-dimensional resistance lattice circuit, a combined resistance of 46.8 Ω can be realized at T = 90%.
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