V. Kumar; R. Singhal; R. Vishnoi; M. Gupta; P. Sharma; M. K. Banerjee; K. Asokan; H. Sharma; A. Gupta; D. Kanjilal
Abstract
In the present work, the effects of 120 MeV Au ion irradiation at different fluences ranging from 1×10 12 to 3×10 13 ions/cm 2 on structural and electrical properties of thin films of Nickel-titanium (Ni-Ti) shape memory alloys (SMAs) grown on Si substrate using DC magnetron co-sputtering ...
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In the present work, the effects of 120 MeV Au ion irradiation at different fluences ranging from 1×10 12 to 3×10 13 ions/cm 2 on structural and electrical properties of thin films of Nickel-titanium (Ni-Ti) shape memory alloys (SMAs) grown on Si substrate using DC magnetron co-sputtering is studied. The surface morphology, crystallization and phase transformation behaviour of these films were investigated using field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), X-ray diffraction (XRD) and Four-terminal resistivity measurement method. XRD pattern reveals that both the phases-martensite as well as austenite exist in the pristine film. Resistivity measurements revealed a two way transformation from cubic to rhombohedral and from rhombohedral to monoclinic phase in pristine film and decrease in its transformation temperature with increased fluence. At higher fluences 5×10 12 and 1×10 13 ions/cm 2 , films showed non-metallic behaviour which could be due to the disorder occurring in these films due to ion impact and precipitate formation. The elemental composition of pristine film is determined by Rutherford backscattering spectroscopy.
D. Ambika; V. Kumar; K. Tomioka; Isaku Kanno
Abstract
Pb(ZrxTi1-x)O3 [PZT] thin films of morphotropic phase boundary (MPB) composition having {001}, {110}, and {111}-orientations were fabricated on silicon substrates (111)Pt/Ti/SiO2/Si using a metal organic decomposition spin-coating technique. The influence of crystallographic orientation on the transverse ...
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Pb(ZrxTi1-x)O3 [PZT] thin films of morphotropic phase boundary (MPB) composition having {001}, {110}, and {111}-orientations were fabricated on silicon substrates (111)Pt/Ti/SiO2/Si using a metal organic decomposition spin-coating technique. The influence of crystallographic orientation on the transverse piezoelectric coefficient e31 * of the films have been determined. The largest e31* was found in {110}-oriented film. The differences observed in e31 * have been explained on the basis of domain wall contributions which are dependent on film texture. The influence of thin film texture on polarization switching characteristics have also been studied.
