Document Type : Research Article
1 Amorphous Semiconductor Research Lab, Department of Physics and Material Science, Madan Mohan Malaviya University of Technology, Gorakhpur 273010, India
2 Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur 273010, India
3 Amorphous Semiconductor Research Lab, Department of Physics and Material Science, M. M. M. University of Technology, Gorakhpur 273010, India
Due to the versatility, non-toxicity and earth abundancy of raw material, SnS has considered a very useful semiconductor material and the harvesting of photovoltaic energy from this kind of semiconductor material is comparatively easier than others since it is highly efficient and cost-effective. The simulation of a unique combination of device structure (ITO/SnO2/SnS/NiO/Mo) has been done and found to be worthful. Past work is quite good but unable to achieve the standard of enhanced open-circuit voltage along with the power conversing efficiency as well. The use of Hole Transport Layer (HTL) has been remarkable too since surface recombination has fallen sharply. The PCE hiked by 25% to 27.62% regardless of it is practically unattainable but in reality, it will prove as a milestone in this area if and only if we are using HTL as well. The different HTL layer has been studied for the proposed device structure and elaborated well. For the benefit of mankind, it is completely low cost and useable along with quite good performance.