The structural transition in accordance to nano sized grain distribution within the amorphous silicon matrix has been described on the basis of spectroscopic analysis as a result of variable input power applied during growth via plasma enhanced chemical vapor deposition (PECVD) process. For this, characterization techniques like micro-ellipsometer, Raman, Field emission Scanning electron microscope (FESEM), and Fourier transform infrared spectroscopy (FTIR) have been effectively utilized to identify transitions in these films particularly in terms of crystallite size (within 1-4 nm) and optical constants. These results indicate that at and above 30 W applied power the separation of two zones takes place as ultranano to nano, leading to the formation of denser matrix having uniformly distributed nano-crystallites. Moreover, these results indicate the presence of unrevealed fine crystallites (ultranano-crystalline phase) as a dominating part of grain boundaries, which may be as ultranano-crystallite phase.  The blending of fine nano-crystallites within the amorphous phase might be the possible reason for the formation of nano-crystallites from ultranano-crystallites.