Metal oxide based hetero-structures (like Pb (ZrxTi1-x) O3 – ZnO) can be used for wide variety of future sensors and electronic devices. This paper presents growth and electrical properties of nano-textured (110) Pb (Zr0.52Ti0.48) O3/ (001) ZnO hetrostructure on oxidized silicon substrate by RF sputtering technique. The grain sizes of ZnO and PZT films are found to be around 30 nm and 80 nm respectively. Resistivity of the ZnO layer is found to be 1x10 9 ?-cm. The electrical properties of the film are studied by creating in-plane electrodes on top of the PZT/ZnO hetrostructure film. The remnant polarization of the film is found ~ 47 µC/ cm 2 at 200 kV/ cm 2 . Dielectric constant of the film is found to be 300 at 1 kHz. The film also showed a low leakage current density of ~ 10 -5 A/cm 2 at 200 kV/ cm applied electric field. The nano-textured (110) Pb (Zr0.52Ti0.48) O3/ (100) ZnO hetrostructure integrated with inter-digital-transducers and microelectronic is well suitable for low-cost, robust, programmable passive micro sensors for military structure and systems such as aircraft, missiles.