Growth, Characterization And I-V characteristics Of Tin Oxide Nanowires
Advanced Materials Letters,
2012, Volume 3, Issue 6, Pages 515-518
AbstractOne-dimensional wire shaped tin oxide (SnO2) nanostructures have been synthesized by thermal evaporation method. The growth of SnO2 nanostructure was carried out on gold catalyst layer coated silicon substrate. X-ray diffraction (XRD) results reveals that synthesized SnO2 nanowires have polycrystalline nature with tetragonal rutile structure. SEM, TEM and EDX observation concludes that the uniform SnO2 nanowires (diameter ~ 40 nm and length ~ 50 μm) grow with vapor-liquid-solid (VLS) mechanism. I-V characteristics of single SnO2 nanowire show semiconducting behaviour. Due to structural and electrical properties of SnO2 nanowire, these nanowires would be a promising candidate for gas sensing applications.
- Article View: 7
- PDF Download: 0