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Abstract
This paper addresses the realization of the integrated magnetic field measurement microsystem incorporating regulation electronics for compensation of its non-idealities and environmental influence. The core of the integrated, silicon based, microsystem represents the Hall element sensor which still promises the optimal approach regarding performance versus fabrication cost in a standard 0.35µm CMOS technology. Research is mainly focused on the rejecting the influence of the temperature dependant sensor characteristics with intention of the overall performance improvement. Proposed approach adjust the measured signal with accuracy of 455ppm/°C for all fabrication processes and temperature extending from -40°C up to 130°C and typically up to 32ppm/°C for same process.
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