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Abstract
Plasma Enhanced Atomic Layer Deposition (PEALD) technique has been used for the fabrication of nanolaminated Al2O3-HfO2 thin films as well as of single Al2O3 and HfO2 layers on silicon substrates. The three different layers, i.e. Al2O3, HO2 and the nanolaminated Al2O3-HfO2 thin films, which consists of very thin alternating layers of Al2O3 and HfO2, have been deposited at temperature as low as 250°C. Each of them possesses a total thickness of about 30 nm and has been tested as possible dielectric for microelectronics devices. In particular, the structural properties and their evolution upon annealing treatment at 800°C have been investigated. Moreover, the dielectrical properties of the nanolaminated system have been compared to the opposite single Al2O3 and HfO2 layers. The collected data pointed out to promising properties of the fabricated nanolaminated film. Copyright © VBRI Press.
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