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Enhanced gettering of gold at end-of-range defects in high energy ion implanted silicon

Satyabrata Mohapatra

Volume 8, Issue 10 , October 2017, , Pages 999-1003

https://doi.org/10.5185/amlett.2017.1648

Abstract
  We report on the gettering behavior of Au at end-of-range (EOR) defects in float-zone grown Si(111), implanted with 1.5 MeV Au 2+ ions at room temperature. The effects of implantation dose and annealing temperature on the thermal evolution of gettering behavior of EOR defects have been investigated using ...  Read More