M. R. Eraky; Mohamed Th. S. Heikal
Abstract
We address a vesicular basalt sample from Jabel Isbil Volcano that is located in Dhamar-Rada'a Volcanic Field (DRVF), SE Sana'a, Yemen. The studied vesicular basalt represents the main rock type at the top-hill volcano, whereas olivine basalt and mugearite represent the foot-hill and middle-hill volcano, ...
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We address a vesicular basalt sample from Jabel Isbil Volcano that is located in Dhamar-Rada'a Volcanic Field (DRVF), SE Sana'a, Yemen. The studied vesicular basalt represents the main rock type at the top-hill volcano, whereas olivine basalt and mugearite represent the foot-hill and middle-hill volcano, respectively. Therefore, the present investigation stresses on vesicular basalt after thermal treatment processes. Our measurements revealed that the samples have semiconducting behavior with high electrical resistivity. Moreover, the dielectric constant has low/constant values. Electrical resistivity reached 1.2 G.ohm.m at room temperature. The authors strongly recommend that the vesicular basalts elsewhere give rise to high economic and strategic potential of high technologies.
Sandra Dias; S. B. Krupanidhi
Abstract
The Cu2SnS3/AZnO p-n heterojunction was fabricated and the structural and optical properties of the films were studied. The phase formation and the crystallite size of the films was analysed using X-ray diffraction. The morphology was studied using field emission scanning electron microscopy and transmission ...
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The Cu2SnS3/AZnO p-n heterojunction was fabricated and the structural and optical properties of the films were studied. The phase formation and the crystallite size of the films was analysed using X-ray diffraction. The morphology was studied using field emission scanning electron microscopy and transmission electron microscopy. The temperature dependent photoluminescence studies were conducted from 123 K to 353 K. The various possible transitions corresponding to the luminescence peaks were indexed. The intensities of the peaks were found to decrease with increase in temperature whereas there was found to be no change in the energy of emission. The chromaticity coordinates for the CTS/AZO heterojunction for different temperatures were found and it corresponded to white light emission at all temperatures.
R. Rakesh Kumar; K. Narasimha Rao; K. Rajanna; A. R. Phani
Abstract
Silicon nanowires were grown on tin (Sn) coated Si substrates using electron beam evaporation technique at a growth temperature of 350°C. The as grown Si nanowires were characterized by Field Emission Scanning Electron Microscope (FESEM), Transmission Electron Microscopy attached with Energy Dispersive ...
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Silicon nanowires were grown on tin (Sn) coated Si substrates using electron beam evaporation technique at a growth temperature of 350°C. The as grown Si nanowires were characterized by Field Emission Scanning Electron Microscope (FESEM), Transmission Electron Microscopy attached with Energy Dispersive X-Ray Analyser (TEM-EDX) for their morphological, structural, and compositional properties, respectively. The grown Si nanowires were randomly oriented on the substrate with a length of ~ 500 nm for a deposition time of 15 min. Silicon nanowires have shown tin nanoparticle (capped) on top of it confirming the Vapor-Liquid-Solid (VLS) growth mechanism responsible for Si nanowires growth. The nanowire growth rate was measured to be ~30 nm/min. Transmission Electron Microscope (TEM) measurements have revealed single crystalline nature of Si nanowires. The obtained results have indicated good progress towards finding alternative catalyst to gold for the synthesis of Si nanowires.
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