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Effect of parasitic polytypes on ballistic electron transport in chemical vapor deposition grown 6H-SiC epitaxial layers

Ilan Shalish

Volume 10, Issue 7 , July 2019, , Pages 465-469

https://doi.org/10.5185/amlett.2019.2193

Abstract
  Growth of epitaxial layers is required for most of today’s devices. Epilayer growth is commonly carried out under conditions less optimal than those of bulk growth. In materials having multiple stable polytypes, such as SiC, it may facilitate concurrent nucleation of undesired polytypes. Using ...  Read More

Effect of parasitic polytypes on ballistic electron transport in chemical vapor deposition grown 6H-SiC epitaxial layers