Volume 16 (2025)
Volume 15 (2024)
Volume 14 (2023)
Volume 13 (2022)
Volume 12 (2021)
Volume 11 (2020)
Volume 10 (2019)
Volume 9 (2018)
Volume 8 (2017)
Volume 7 (2016)
Volume 6 (2015)
Volume 5 (2014)
Volume 4 (2013)
Volume 3 ( 2012)
Volume 2 (2011)
Volume 1 (2010)
Broadband and fast photodetectors based on multilayer p-MoTe2/n-WS2 heterojunction with graphene electrodes

Wenkai Zhu; Faguang Yan; Xia Wei; Quanshan Lv; Huai Yang; Kaiyou Wang

Volume 10, Issue 5 , May 2019, , Pages 329-333

https://doi.org/10.5185/amlett.2019.2281

Abstract
  Two-dimensional (2D) atomic crystals, such as graphene, black phosphorus and transition metal dichalcogenides (TMDCs) are attractive for use in optoelectronic devices, due to their unique optical absorption properties and van der Waals (vdWs) force between layers. Heterostructures based on layered semiconductors ...  Read More

Broadband and fast photodetectors based on multilayer p-MoTe<sub>2</sub>/n-WS<sub>2</sub> heterojunction with graphene electrodes


Narrow bandgap quantum dot diode structures and photoresistors for thermo-photovoltaic and infrared applications 

Karen M. Gambaryan

Volume 9, Issue 2 , February 2018, , Pages 112-115

https://doi.org/10.5185/amlett.2018.1804

Abstract
  For the thermophotovoltaic (TPV) and other mid-infrared applications, the narrow bandgap quantum dot (QD) diode structures and photoresistors (PR) based on InAsSbP alloys and InAs industrial substrates are fabricated and investigated. For the nucleation of InAsSbP composition strain-induced QDs in Stranski–Krastanow ...  Read More

Narrow bandgap quantum dot diode structures and photoresistors for thermo-photovoltaic and infrared applications