Matko Mužević; Maja Varga Pajtler; Sanjeev Kumar Gupta; Igor Lukačević
Abstract
Optical properties of 2D materials can be effectively modulated by employing multilayer structures with different number of layers. Using the theoretical approach based on density functional theory we simulated relevant optical spectra of antimony and indium mono- and multilayers. We showed that the ...
Read More
Optical properties of 2D materials can be effectively modulated by employing multilayer structures with different number of layers. Using the theoretical approach based on density functional theory we simulated relevant optical spectra of antimony and indium mono- and multilayers. We showed that the electronic band structures of antimonene and indiene possess numerous tracking bands enhancing the transition probability. Therefore, high absorption coefficients are found. Modelled multilayer nanostructures of antimonene and indiene experience a red-shift of absorption bands. Antimonene exhibits an optical directional anisotropy regarding the absorbance coefficient and reflectance spectrum for different nanolayer thicknesses. Indiene possesses very high reflectance and refractive index in the visible and IR spectrum which can be effectively modulated by the number of layers. Our work shows that antimonene and indiene multilayers harbour untapped potential for the optical applications at the nanoscale.
Shibin T. C. Krishna; Prachi Rastogi; Neha Aggarwal; Amit Kumar Singh Chauhan; Mukesh Kumar; Govind Gupta
Abstract
Scanning tunneling microscopy and X-ray photoelectron spectroscopy have been utilized to probe the growth kinetics, phenomenon of nucleation and segregation of Indium nano-islands on atomically clean stepped Si (113) 3x2 surface. Kinetically controlled growth of few monolayers (2.5 ML) of Indium (In) ...
Read More
Scanning tunneling microscopy and X-ray photoelectron spectroscopy have been utilized to probe the growth kinetics, phenomenon of nucleation and segregation of Indium nano-islands on atomically clean stepped Si (113) 3x2 surface. Kinetically controlled growth of few monolayers (2.5 ML) of Indium (In) atoms at room temperature leads the formation of two dimensional (2D) nanoclusters on Si (113) surface. The thermal stability of these In nanoclusters was investigated by residual thermal desorption experiments where the In adsorbed system was annealed at different temperatures (100-600 o C). It is found that, the size and density of the In nanoclusters on Si surface were influenced by the annealing temperature. In particular, on annealing the In/Si (113) system at 300 °C, 2D nanoclusters were converted into a metastable state of 3D nanoclusters. Competition between layering and nano-clustering has been observed twice during the entire thermal annealing process and discussed in detail. The size tunability of these metal nanoclusters on silicon surfaces could be utilized for the fabrication of next generation nanoscale devices.
)