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 Growth And Properties Of Pulsed Laser Deposited Al-doped ZnO Thin Film

Gurpreet Kaur; Anirban Mitra; K.L. Yadav

Volume 6, Issue 1 , January 2015, , Pages 73-79

https://doi.org/10.5185/amlett.2015.5606

Abstract
  Al-doping of 1.5% by weight, in ZnO (Al:ZnO), thin films are deposited on glass substrates at temperature 400 °C and varying oxygen gas pressure (PO2) from 1.33 Pa to 5.32 Pa via Pulsed Laser Deposition (PLD) technique. The single crystalline nature of the thin films is confirmed from the X-ray diffraction ...  Read More