Rishi Sharma; Neelima Sharma; Rahul Parmar; Vijay Chatterjee; Anoop Kumar; N. Woehrl; V. Buck; P. K. Barhai
Abstract
Nanocrystalline diamond (NCD) films are deposited on silicon substrates using Microwave Plasma Enhanced Chemical Vapor Deposition technique with the variation of microwave power from 800 W to 1800 W at 200 mbar for 5 hrs. Methane is used as a precursor along with argon and hydrogen as carriers for deposition. ...
Read More
Nanocrystalline diamond (NCD) films are deposited on silicon substrates using Microwave Plasma Enhanced Chemical Vapor Deposition technique with the variation of microwave power from 800 W to 1800 W at 200 mbar for 5 hrs. Methane is used as a precursor along with argon and hydrogen as carriers for deposition. Deposited films are characterized by using Raman, FTIR, optical contact angle, AFM and SEM. The biocompatibility study has been carried out by cell viability assay, haemolysis test and simulated body fluid (SBF) adsorption assay. The Lymphocytes and Fibroblast cell lines are cultured on the NCD coated samples and cell viability has been determined by MTT assay. The surface morphology of the samples has been studied by using AFM, before and after interaction with SBF. It has been observed that NCD coated substrates are biocompatible, haemocompatible and also promote the growth of the cells, while the uncoated substrates cause cell death.
Vijay Chatterjee; Rishi Sharma; P. K. Barhai
Abstract
Ultrananocrystalline diamond (UNCD) films are deposited using microwave plasma enhanced chemical vapor deposition system. Depositions of films are carried out at low pressure 25 mbar, low temperature 400 ºC and at low microwave power (800 - 1000 Watt). Diamond thin films were characterized using ...
Read More
Ultrananocrystalline diamond (UNCD) films are deposited using microwave plasma enhanced chemical vapor deposition system. Depositions of films are carried out at low pressure 25 mbar, low temperature 400 ºC and at low microwave power (800 - 1000 Watt). Diamond thin films were characterized using Raman spectroscopy, AFM, field emission scanning electron microscopy and optical contact angle measurements. In-situ diagnosis of the plasma composition is carried out using optical emission spectroscopy (OES). OES spectra show intense peak at 516.5nm corresponding to C2 dimer. Peaks at 387.0nm, 405.3nm, 431.5nm, 486.1nm, and 656.1nm have also been observed. Effect of horizontal position of plasma ball with respect to substrate position has been critically analyzed. Relation between the horizontal positioning and plasma ball along with the emission spectra of different gas species are studied which are very much crucial to predict the uniformity and morphology of the films deposited. Dependence of film wetability with the plasma ball positioning and relative intensity of carbon dimer has been studied C2 dimer plays an important role not only in the nucleation and growth of UNCD films but also on the surface modification .