Volume 13 (2022)
Volume 12 (2021)
Volume 11 (2020)
Volume 10 (2019)
Volume 9 (2018)
Volume 8 (2017)
Volume 7 (2016)
Volume 6 (2015)
Volume 5 (2014)
Volume 4 (2013)
Volume 3 ( 2012)
Volume 2 (2011)
Volume 1 (2010)
80 MeV Carbon Ion Irradiation Effects On Advanced 200 GHz Silicon-germanium Heterojunction Bipolar Transitors

N.H. Vinayakprasanna; K.C. Praveen; N. Pushpa; Ambuj Tripathi; John D Cressler; A.P. Gnana Prakash

Volume 6, Issue 2 , February 2015, , Pages 120-126

http://dx.doi.org/10.5185/amlett.2015.5708

Abstract
  The total dose effects of 80 MeV carbon ions and 60 Co gamma radiation in the dose range from 1 Mrad to 100 Mrad on advanced 200 GHz Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) are investigated. The stopping and range of ions in matter (SRIM) simulation study was conducted to understand ...  Read More

Mdification Of Poly(3,4-ethylenedioxy Thiophene)/poly(4-styrene Sulphonate) (PEDOT: PSS)/nanographit Nanocomposite  through Ion Beam Technique

Sunita Rattan; Prachi Singhal; Devesh Kumar Avasthi; Ambuj Tripathi

Volume 5, Issue 12 , December 2014, , Pages 712-716

http://dx.doi.org/10.5185/amlett.2014.nib504

Abstract
  Ion implantation is a surface treatment process in which the surface of a sample is bombarded with a beam of energetic dopant ions to implant ions into the matrix of the substrate. In the present work, nanocomposites of poly(3,4-ethylenedioxy thiophene) /poly(4-styrene sulphonate) (PEDOT: PSS) and nanographite ...  Read More

SHI Irradiation Induced Amorphization Of Nanocrystalline Tin Oxide Thin Film At Low Temperature

R.S. Chauhan; Vijay Kumar; Anshul Jain; Deepti Pratap; D.C. Agarwal; R.J. Chaudhary; Ambuj Tripathi

Volume 5, Issue 11 , November 2014, , Pages 666-670

http://dx.doi.org/10.5185/amlett.2014.nib501

Abstract
  Nanocrystalline tin oxide (SnO2) thin films were fabricated using pulsed laser deposition (PLD) technique. The as-deposited films were irradiated at liquid nitrogen (LN2) temperature using 100 MeV Ag ions at different fluences ranging from 3×10 13 to 3×1014 ions/cm 2 and at 75o with respect ...  Read More

Surface Patterning On Indium Phosphide With Low Energy Ar Atoms Bombardment: An Evolution From Nanodots To Nanoripples

Indra Sulania; Ambuj Tripathi; D. Kabiraj; Matthieu Lequeux; Devesh Avasthi

Volume 1, Issue 2 , September 2010, , Pages 118-122

http://dx.doi.org/10.5185/amlett.2010.5128

Abstract
  In the present study, Indium Phosphide (InP) (100) samples with a thickness of ~ 0.5 mm have been bombarded with 1.5 keV Argon atoms for a fixed fluence of 8 × 10 16 atoms/cm 2 . The angle of incidence of the atom beam has been varied from normal incidence to 76° with respect to surface normal. ...  Read More