TY - JOUR ID - 15094 TI - Growth and characterization of graphite doped CdTe/CdS thin film heterojunction JO - Advanced Materials Letters JA - AML LA - en SN - 0976-3961 AU - Asghar, Muhammad AU - Hong Xie, Ya AU - Asif Nawaz, M. AU - M. Arbi, Hammad AU - Y. Shahid, M. AU - Iqbal, F. AU - Khalid, Waqas AD - Y1 - 2017 PY - 2017 VL - 8 IS - 8 SP - 878 EP - 882 KW - CdTe KW - CdS KW - graphite KW - heterojunction DO - 10.5185/amlett.2017.7094 N2 - Doping is a notable factor to improve the performance of CdTe/CdS heterojunction solar cell. Graphite doped CdTe/CdS heterojunction on Si (1 1 1) substrate has systematically fabricated by thermal evaporator method under medium vacuum (10 -4 torr) condition. Characterization of doped CdTe/CdS film was carried out by various diagnostic techniques such as X-ray diffraction (XRD) exhibits the polycrystalline structure of cubic phase CdTe and hexagonal phase CdS, scanning electron microscopy (SEM) shows the smoothening of the film, energy dispersive X-ray (EDX) confirm the elemental composition found in the film and current-voltage (I-V) analysis suggests the diode like properties where the current is slightly increased by the doping of graphite into CdTe/CdS heterojunction compared to the reported literature. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in CdTe/CdS heterojunction.  UR - https://aml.iaamonline.org/article_15094.html L1 - https://aml.iaamonline.org/article_15094_0d6eadff521513b15ffdbdb9782786f2.pdf ER -