TY - JOUR ID - 14876 TI - Defect Analysis And Performance Evaluation Of P-type Epitaxial GaAs Layer On Ge Substrate For GaAs/Ge Based Advanced Device JO - Advanced Materials Letters JA - AML LA - en SN - 0976-3961 AU - Kumar Dalapati, Goutam AU - Suresh, Vignesh AU - Chakraborty, Sandipan AU - Mahata, Chandreswar AU - Ren, Yi AU - Bhat, Thirumaleshawara AU - Tripathy, Sudhiranjan AU - Lee, Taeyoon AU - Kanta Bera, Lakshmi AU - Chi, Dongzhi AD - Y1 - 2016 PY - 2016 VL - 7 IS - 7 SP - 517 EP - 524 KW - GaAs KW - native oxides KW - Raman spectroscopy KW - rapid thermal annealing KW - GaAs/Ge integration DO - 10.5185/amlett.2016.6439 N2 - The structural defects and formation of native oxides during thermal treatment on p-type epitaxial-GaAs/Ge have been investigated using spectroscopic measurements and electrical characterization. The performance of epi-GaAs based device depends on the interface quality between epi-GaAs and gate oxide and structural quality of the epi-GaAs layer. P-type epitaxial-GaAs was grown on Ge substrate using MOCVD technique at 675oC. Defective surface native oxides of arsenic and gallium oxides are observed for as-grown epi-GaAs layer. The arsenic oxide significantly reduced after thermal treatment as seen from XPS observations. The structural defects at surface enhanced after thermal treatment which is clearly probed by micro-Raman spectroscopy. Atomic layer deposited (ALD) Al2O3 significantly improved the interface properties after thermal treatment compared with bare epi-GaAs layer. Even though, the interface trap defect density slightly higher for p-type epi-GaAs MOS capacitor compared with bulk p-type GaAs devices, high frequency-dispersion in epi-GaAs based devices observed. This is mainly governs through the formation of p-i-n junction diode in the epi-GaAs layer on Ge substrates. UR - https://aml.iaamonline.org/article_14876.html L1 - https://aml.iaamonline.org/article_14876_d1ade2f64080066621ee1dd3f6c559e0.pdf ER -