TY - JOUR ID - 14013 TI - Coulomb Drag of Electron-Electron Interactions in GaAs Bilayer with a Non Homogeneous Dielectric Background JO - Advanced Materials Letters JA - AML LA - en SN - 0976-3961 AU - Kumar Upadhyay, Sharad AU - K. Saini, L. AD - Y1 - 2020 PY - 2020 VL - 11 IS - 7 SP - 1 EP - 5 KW - Fermi KW - liquid regime KW - non KW - homogeneous system KW - dielectric background KW - RPA method DO - 10.5185/amlett.2020.071539 N2 - Motivated by recent studies in multilayer system of dielectric background, we analytically studied the coulomb drag effect in hetero-junction of GaAs system, which consist a non-homogeneous dielectric background. By considering the weak interaction in static case, the effective dielectric function is evaluated by using Random Phase Approximation (RPA) method as RPA is a reliable study for high density regime. The effective coulomb interaction cause of electron-electron interaction in the Boltzmann regime and at low temperature limit is considered. Dependency of layer separation is effectively described by local form factor has been taken into account in effective dielectric function, the local form factor is obtained from the solution of the Poisson equation of a three-layer dielectric medium with GaAs sheets. Drag resistivity is measured numerically and analytically, where temperature and density dependence are investigated and compared to 2DEG-2DEG double-layer structures theoretically and experimentally at very low temperature. UR - https://aml.iaamonline.org/article_14013.html L1 - https://aml.iaamonline.org/article_14013_be0c8e9ae12879347a1073fbd6c7cf6f.pdf ER -