%0 Journal Article %T Defect Analysis And Performance Evaluation Of P-type Epitaxial GaAs Layer On Ge Substrate For GaAs/Ge Based Advanced Device %J Advanced Materials Letters %I International Association of Advanced Materials %Z 0976-3961 %A Kumar Dalapati, Goutam %A Suresh, Vignesh %A Chakraborty, Sandipan %A Mahata, Chandreswar %A Ren, Yi %A Bhat, Thirumaleshawara %A Tripathy, Sudhiranjan %A Lee, Taeyoon %A Kanta Bera, Lakshmi %A Chi, Dongzhi %D 2016 %\ 07/01/2016 %V 7 %N 7 %P 517-524 %! Defect Analysis And Performance Evaluation Of P-type Epitaxial GaAs Layer On Ge Substrate For GaAs/Ge Based Advanced Device %K GaAs %K native oxides %K Raman spectroscopy %K rapid thermal annealing %K GaAs/Ge integration %R 10.5185/amlett.2016.6439 %X The structural defects and formation of native oxides during thermal treatment on p-type epitaxial-GaAs/Ge have been investigated using spectroscopic measurements and electrical characterization. The performance of epi-GaAs based device depends on the interface quality between epi-GaAs and gate oxide and structural quality of the epi-GaAs layer. P-type epitaxial-GaAs was grown on Ge substrate using MOCVD technique at 675oC. Defective surface native oxides of arsenic and gallium oxides are observed for as-grown epi-GaAs layer. The arsenic oxide significantly reduced after thermal treatment as seen from XPS observations. The structural defects at surface enhanced after thermal treatment which is clearly probed by micro-Raman spectroscopy. Atomic layer deposited (ALD) Al2O3 significantly improved the interface properties after thermal treatment compared with bare epi-GaAs layer. Even though, the interface trap defect density slightly higher for p-type epi-GaAs MOS capacitor compared with bulk p-type GaAs devices, high frequency-dispersion in epi-GaAs based devices observed. This is mainly governs through the formation of p-i-n junction diode in the epi-GaAs layer on Ge substrates. %U https://aml.iaamonline.org/article_14876_d1ade2f64080066621ee1dd3f6c559e0.pdf