@article { author = {N. Omehe, N. and N.Nwachuku, D.}, title = {Electronic Properties of the ChalcopyritesAgFeS<sub>2</sub>, AgFeSe<sub>2</sub> and AgFeTe<sub>2</sub> Compounds}, journal = {Advanced Materials Letters}, volume = {12}, number = {1}, pages = {1-6}, year = {2021}, publisher = {International Association of Advanced Materials}, issn = {0976-3961}, eissn = {0976-397X}, doi = {10.5185/amlett.2021.011597}, abstract = {The electronic properties of the ChalcopyritesAgFeS2, AgFeSe2 and AgFeTe2 have been investigated using the pseudopotential method within the density functional theory (DFT). The LDA+U technique and the projector augmented waves (PAW) were used for the electronic band structure calculations, while the norm-conserving pseudopotentials were used for the structure optimization. The calculated results showed that AgFeS2, AgFeSe2 and AgFeTe2 are semiconductors with energy bandgap values of 3.33 eV, 0.05 eV and 1.30 eV respectively. The transition points in the band structure were all notable because of the narrowness of the bands about the Fermi level. The total density of states and their corresponding partial density of states were also computed.}, keywords = {AgFeS2,AgFeSe2,AgFeTe2,electronic band structure,chalcopyrite materials}, url = {https://aml.iaamonline.org/article_14042.html}, eprint = {https://aml.iaamonline.org/article_14042_afcc09abecf0f5715f4b30a133858a99.pdf} }