@article { author = {Solanki, Pankaj and Lakhani, Pratik and Ravalia, Ashish and Kataria, Bharat}, title = {Effect of Incident Light on Transport Properties of Pulsed Laser Deposited Manganite Thin Films}, journal = {Advanced Materials Letters}, volume = {11}, number = {4}, pages = {1-5}, year = {2020}, publisher = {International Association of Advanced Materials}, issn = {0976-3961}, eissn = {0976-397X}, doi = {10.5185/amlett.2020.041502}, abstract = {In this communication, we report the results of different light illumination on electrical transport properties of La0.67Ca0.33Mn0.9Ga0.1O3 (LCMGO) thin films grown on Si (100) ( n-type phosphorus-doped) wafer using Pulsed Laser Deposition (PLD) System. The variation in deposition time changes the thickness of the films. X-ray Diffraction (XRD) reveals the polycrystalline structure of LCMGO thin films. The cross-sectional SEM were taken to determine the thickness of the films with changing deposition time. Atomic Forced Micrographs (AFM) show that island type grains diffuse into one another to form a more uniform distribution of grains as the thickness of the film increases. The charge transport properties have been studied using the I-V measurement at LCMGO/Si interfaces. I-V measurement shows the backwards-diode like the behaviour of the LCMGO/Si p-n junction. The reverse bias current changes under the influence of different incident light illumination. The built-in electric field is generated at the interface when the film was illuminated with UV light. The tunnelling process for backward diode like p-n junction is explained using a modified Simmons model.}, keywords = {Thin films,UV light,electron scattering,n junction,backward diode,modified simmons model}, url = {https://aml.iaamonline.org/article_13984.html}, eprint = {https://aml.iaamonline.org/article_13984_d60d4873bce31a1a4f5a846ac568e89a.pdf} }