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Impact Of Oxygen Diffusion On The Performance Of HfO2/GaAs Metal-oxide-semiconductor Field-effect-transistors

Anindita Das; Sanatan Chattopadhyay; Goutam Kumar Dalapati

Volume 7, Issue 2 , February 2016, , Pages 123-129

https://doi.org/10.5185/amlett.2016.6277

Abstract
  In the current work, electrical performance of n-channel GaAs MOSFETs with HfO2 gate dielectrics has been investigated by considering the impact of oxygen diffusion from gate dielectric layer. Initially, the HfO2/GaAs MOS capacitors are fabricated and its relevant process recipe has been simulated. The ...  Read More