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Electrical properties of Ir/n-InGaN/Ti/Al Schottky barrier diode in a wide temperature range

R. Padma; V. Rajagopal Reddy

Volume 5, Issue 1 , January 2014, , Pages 31-38

https://doi.org/10.5185/amlett.2013.6503

Abstract
  The temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Ir/n-InGaN Schottky contacts have been investigated and analysed in the temperature range of 100-400 K. The estimated barrier heights and ideality factor of Ir/n-InGaN Schottky diode are 0.30 eV (I-V), 1.15 ...  Read More