Sakshi Sahare; S. J. Dhoble; Pranav Singh; Meera Ramrakhiani
Abstract
The powder of ZnS nanoparticles were prepared by using chemical deposition technique and characterized by electroluminescence techniques are reported in this paper. The estimated size of ZnS:Cu nanocrystals with change in capping agent concentration and ZnS:Cu/PVA nanocomposites and no effect of doping ...
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The powder of ZnS nanoparticles were prepared by using chemical deposition technique and characterized by electroluminescence techniques are reported in this paper. The estimated size of ZnS:Cu nanocrystals with change in capping agent concentration and ZnS:Cu/PVA nanocomposites and no effect of doping has been observed on the absorption spectra. Electroluminescence (EL) investigations of nanocrystalline powder as well as nanocomposites, it is seen that Log B vs. 1/V curve is a straight line with negative slope. This indicates that EL is produced by acceleration-collision mechanism. The detail EL characterization and application in display devices of these materials are reported in this paper.
N. Thejo Kalyani; S.J. Dhoble; R.B. Pode
Abstract
The mechanism of energy transfer leading to electroluminescence (EL) of a lanthanide complex, EuxY(1-x)(TTA)3Phen (TTA= thenoyltrifluoro-acetone, phen=1,10-phenanthroline), doped into TPBi(1,3,5-tris(N-Phenyl-benzimidizol-2-yl) benzene host at 15 wt% of host is investigated. With the device structure ...
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The mechanism of energy transfer leading to electroluminescence (EL) of a lanthanide complex, EuxY(1-x)(TTA)3Phen (TTA= thenoyltrifluoro-acetone, phen=1,10-phenanthroline), doped into TPBi(1,3,5-tris(N-Phenyl-benzimidizol-2-yl) benzene host at 15 wt% of host is investigated. With the device structure of anode/hole transport layer/EuxY(1-x)(TTA)3Phen (15%): TPBi/electron transport layer/cathode, maximum luminescence of 185.6 cd/m2 and 44.72 cd/m2 was obtained from device I made of Eu0.4Y0.6(TTA)3Phen and device II made of Eu0.5Y0.5(TTA)3Phen, respectively at 18 volts. Saturated red Eu 3+ emission based on 5 D0→ 7 F2 transition is centered at a wavelength of 612 nm with a full width at half maximum of 5 nm. From the analysis of I-V, J-V-L characteristics and electroluminescent (EL) spectra, we conclude that direct trapping of holes and electrons and subsequent formation of the excitation occur on the dopant, leading to high quantum efficiencies at low current densities. These results show that fabricated OLED devices can successfully emit saturated red light and can be used in applications such as opto-electronic OLED devices, displays and solid-state lighting technology.
