Pankaj Solanki; Pratik Lakhani; Ashish Ravalia; Bharat Kataria
Abstract
In this communication, we report the results of different light illumination on electrical transport properties of La0.67Ca0.33Mn0.9Ga0.1O3 (LCMGO) thin films grown on Si (100) ( n-type phosphorus-doped) wafer using Pulsed Laser Deposition (PLD) System. The variation in deposition time changes the thickness ...
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In this communication, we report the results of different light illumination on electrical transport properties of La0.67Ca0.33Mn0.9Ga0.1O3 (LCMGO) thin films grown on Si (100) ( n-type phosphorus-doped) wafer using Pulsed Laser Deposition (PLD) System. The variation in deposition time changes the thickness of the films. X-ray Diffraction (XRD) reveals the polycrystalline structure of LCMGO thin films. The cross-sectional SEM were taken to determine the thickness of the films with changing deposition time. Atomic Forced Micrographs (AFM) show that island type grains diffuse into one another to form a more uniform distribution of grains as the thickness of the film increases. The charge transport properties have been studied using the I-V measurement at LCMGO/Si interfaces. I-V measurement shows the backwards-diode like the behaviour of the LCMGO/Si p-n junction. The reverse bias current changes under the influence of different incident light illumination. The built-in electric field is generated at the interface when the film was illuminated with UV light. The tunnelling process for backward diode like p-n junction is explained using a modified Simmons model.
Vineet Kumar Singh; Jampana Nagaraju
Abstract
This paper presents the effect of emitter thickness and post-annealing process on the conversion efficiency of crystalline silicon (c-Si) solar cells. Diffusion parameters like pre-deposition temperature, drive-in temperature, and process duration assist to control the emitter thickness and inturn improves ...
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This paper presents the effect of emitter thickness and post-annealing process on the conversion efficiency of crystalline silicon (c-Si) solar cells. Diffusion parameters like pre-deposition temperature, drive-in temperature, and process duration assist to control the emitter thickness and inturn improves the conversion efficiency of the solar cells. It is observed that shallower emitter cells have higher conversion efficiency of 10.81% than deeper emitter cells of 7.62%. Post-annealing process at 700 °C for 60 minutes boosts the efficiency of shallower emitter cell from 10.81% to 12.06%. Dark current-voltage characteristics authenticate the formation of p-n junction and also elucidate the presence of recombination saturation current along with diffusion saturation current. Illuminated and dark current-voltage characteristics further provide the evidence that post-annealing process during phosphorus diffusion reduces the trap density and thus the recombination saturation current, which helps to improve the efficiency. The combination of a shallower emitter with post-annealing process provides an excellent approach to enhance the solar cell efficiency.
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