Daria I. Tishkevich; Sergey S. Grabchikov; Stanislav B. Lastovskii; Dzmitry V. Yakimchuk; Denis A. Vinnik; Alla I. Vorobjova; Tatiana I. Zubar; Alex V. Trukhanov
Abstract
Currently, medicine uses a large number of devices and sources of ionizing radiation, which have a dangerous effect on workers in medical diagnostic rooms and patients. Human organs are very sensitive to the damaging effects of radiation. The commonly used material for radiation protection proposes is ...
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Currently, medicine uses a large number of devices and sources of ionizing radiation, which have a dangerous effect on workers in medical diagnostic rooms and patients. Human organs are very sensitive to the damaging effects of radiation. The commonly used material for radiation protection proposes is lead. In recent years, bismuth deposition has become an interesting subject for the electrochemical community because of its unique properties. There are a limited number of authors dealing with Bi films onto metallic substrates by electrochemical deposition. The conditions of Bi electrodeposition and the structure of Bi coatings were examined. The shielding efficiency of Bi coatings under electron irradiation with 1,6–1,8 MeV was measured. The electron beam attenuation coefficient was estimated by the changing of current-voltage characteristics of semiconductor test structures which were located with and without shields. It has been determined that optimal shielding efficiency and mass-dimensional parameters have Bi shields with 2 g/cm 2 mass thickness and 156 shielding efficiency.
H. W. Du; J. Yang; F. Xu; L. Zhao; Z. Q. Ma
Abstract
Physical asymmetrical Metal / AZO / SiOx / n-Si / Metal devices in semiconductor-insulator-semiconductor (A-SIS) framework were investigated for their anormaly current-voltage characteristics under light irradiation. The devices showed a normal rectifying character in dark but manifested a peculiar current-voltage ...
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Physical asymmetrical Metal / AZO / SiOx / n-Si / Metal devices in semiconductor-insulator-semiconductor (A-SIS) framework were investigated for their anormaly current-voltage characteristics under light irradiation. The devices showed a normal rectifying character in dark but manifested a peculiar current-voltage feature at reverse bias under illumination. Considering the change of energy band structure at the reverse electric field, it was found that the transport of electrons was mainly dominated by the thermionic emission and quantum tunneling at low voltage. With the increase of the reverse bias, the electrons were able to tunnel through the reduced barrier of ultra-thin SiOx layer (<1nm) and an effective triangle-like barrier of silicon. An appropriate simulation of the J-V relationship demonstrated that the photons acting as the assisted part magnified the reverse current density, and the thickness of SiOx layer managed the amount of the reverse saturation current.