Ilan Shalish
Abstract
Growth of epitaxial layers is required for most of today’s devices. Epilayer growth is commonly carried out under conditions less optimal than those of bulk growth. In materials having multiple stable polytypes, such as SiC, it may facilitate concurrent nucleation of undesired polytypes. Using ...
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Growth of epitaxial layers is required for most of today’s devices. Epilayer growth is commonly carried out under conditions less optimal than those of bulk growth. In materials having multiple stable polytypes, such as SiC, it may facilitate concurrent nucleation of undesired polytypes. Using ballistic electron emission spectroscopy, we have repeatedly encountered a spectral feature in chemical vapor deposition (CVD) grown 6H-SiC layers that was absent in spectra of bulk material. This feature is suggested to belong to 4H-SiC inclusions. The presence of a concurrent Schottky barrier in our CVD epilayers coincides with an observation of a lower Fermi level pinning position compared with bulk material. Copyright © VBRI Press.
Rimpy Shukla; C. Summonte; M. Canino; M. Allegrezza; M. Bellettato; A. Desalvo; D. Nobili; S. Mirabella; N. Sharma; M. Jangir; I.P. Jain
Abstract
Silicon nanocrystals (Si NCs) embedded in a dielectric matrix showing tunable band gap properties have recently emerged as attracting top absorbers in silicon based high efficiency multijunction devices. This paper presents optical and electrical characterization of Si NCs in SiC matrix resulting from ...
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Silicon nanocrystals (Si NCs) embedded in a dielectric matrix showing tunable band gap properties have recently emerged as attracting top absorbers in silicon based high efficiency multijunction devices. This paper presents optical and electrical characterization of Si NCs in SiC matrix resulting from annealing at 1100°C of silicon-rich carbide (SRC)/SiC multilayers produced by Plasma Enhanced Chemical Vapour Deposition (PECVD), varying either the Si content in the SRC or the SiC thickness. Simulation of Reflectance and Transmittance spectra in the UV-Vis revealed that 1) the Si crystallization increases with increasing Si content; 2) a severe shrinkage of the multilayers occurs upon annealing due to the release of hydrogen and to crystallisation; 3) the growth of nanocrystals is affected by atomic environment and diffusivity of involved atoms at the investigated temperature. Temperature dependent conductivity measurements are performed on multlayers and on reference layers. The results show evidence of defect state conduction in the SiC matrix.
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