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Oxygen vacancy filament-based resistive switching in Hf0.5Zr0.5O2 thin films for non-volatile memory

Mark Kracklauer; Fabian Ambriz-Vargas; Gitanjali Kolhatkar; Bernhard Huber; Christina Schindler; Andreas Ruediger

Volume 10, Issue 6 , June 2019, , Pages 405-409

https://doi.org/10.5185/amlett.2019.2225

Abstract
  The continued evolution of electronic devices relies on the development of new semiconductor memory technology. Given the high compatibility of the Hf0.5Zr0.5O2 thin films with the CMOS technology, we investigate the charge transport mechanisms that occur in a relative thick Hf0.5Zr0.5O2 thin film (4 ...  Read More

Oxygen vacancy filament-based resistive switching in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films for non-volatile memory