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Energy Materials & Technology
Fabrication of n+-poly-Si/p+-c-Si tunnel diode using Low-pressure Chemical Vapor Deposition for Photovoltaic Applications

Vineet Kumar Singh

Volume 13, Issue 2 , April 2022, , Pages 2202-1693

https://doi.org/10.5185/amlett.2022.021693

Abstract
  In this paper, an n+-poly-silicon/p+-crystalline-silicon tunnel diode has been fabricated and characterized. The n+ poly-silicon layer is deposited by the low-pressure chemical vapor deposition method, while a diffusion furnace is used for boron diffusion in crystalline silicon. Scanning electron microscopy ...  Read More