Composite Materials
Rajnish Raj; Pooja Lohia; D. K. Dwivedi
Abstract
The traditional melt-quench technique was used to synthesize non-oxide (Ga2Ge)100-x(Ga3Sb2)x (x = 15, 30, 45, 60) glass alloys. The vacuum thermal evaporation unit was used to obtain thin films of prepared sample for investigation of optical properties. SEM, XRD and DSC technique were used to find the ...
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The traditional melt-quench technique was used to synthesize non-oxide (Ga2Ge)100-x(Ga3Sb2)x (x = 15, 30, 45, 60) glass alloys. The vacuum thermal evaporation unit was used to obtain thin films of prepared sample for investigation of optical properties. SEM, XRD and DSC technique were used to find the thermal and structural properties of the materials. The linear properties like optical bandgap, extinction coefficient for prepared samples have been studied in present paper of Ge-Ga-Sb for application of optoelectronics. The impurities present in the prepared thin films were defined by FTIR transmittance spectra. The extinction coefficient (k) value decreases with increase in Sb concentration while absorption coefficient (α). It was noticed that value of energy bandgap (Eg) derived from Tauc’s plot varies from 2.9 eV to 1.25 eV. Urbach energy is inversely proportional to the bandgap of the materials. As the Sb concentration increases the band gap goes on decreases which result the increase in Urbach energy. Mott and Davis model has been used for explaining decrease in energy gap of prepared glassy alloys.

Energy Materials & Technology
Shivendra Pratap Ray; Sadanand .; Pooja Lohia; D. K. Dwivedi
Abstract
Due to the versatility, non-toxicity and earth abundancy of raw material, SnS has considered a very useful semiconductor material and the harvesting of photovoltaic energy from this kind of semiconductor material is comparatively easier than others since it is highly efficient and cost-effective. The ...
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Due to the versatility, non-toxicity and earth abundancy of raw material, SnS has considered a very useful semiconductor material and the harvesting of photovoltaic energy from this kind of semiconductor material is comparatively easier than others since it is highly efficient and cost-effective. The simulation of a unique combination of device structure (ITO/SnO2/SnS/NiO/Mo) has been done and found to be worthful. Past work is quite good but unable to achieve the standard of enhanced open-circuit voltage along with the power conversing efficiency as well. The use of Hole Transport Layer (HTL) has been remarkable too since surface recombination has fallen sharply. The PCE hiked by 25% to 27.62% regardless of it is practically unattainable but in reality, it will prove as a milestone in this area if and only if we are using HTL as well. The different HTL layer has been studied for the proposed device structure and elaborated well. For the benefit of mankind, it is completely low cost and useable along with quite good performance.
