Avishek Das; Ajay Kushwaha; Nakul Raj Bansal; Vignesh Suresh; Sanghamitra Dinda; Sanatan Chattopadhyay; Goutam Kumar Dalapati
Abstract
In the present work, cupric oxide (CuO) nanoparticle (NP) thin films were synthesized on glass by combination of sputter and chemical bath deposition technique. The CuO seeds were deposited by using radio frequency (RF) sputter technique at room temperature. CuO nanoparticles were prepared by chemical ...
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In the present work, cupric oxide (CuO) nanoparticle (NP) thin films were synthesized on glass by combination of sputter and chemical bath deposition technique. The CuO seeds were deposited by using radio frequency (RF) sputter technique at room temperature. CuO nanoparticles were prepared by chemical bath deposition. Effect of solute molar concentration (0.02 to 0.04M) and annealing temperature (at 400°C) on nanoparticles size and distribution were studied. The average size of nanoparticles is small in lower molar concentration, which is restructured after annealing to form dense film with relative smaller size nanoparticles. The work opens up new route to synthesize CuO nanorticle thin films for different applications.
Somdatta Paul; Avishek Das; Mainak Palit; Satyaban Bhunia; Anupam Karmakar; Sanatan Chattopadhyay
Abstract
In this work, a comparative performance analysis of ZnO nanowires grown by following single- and double-step techniques on (100) p-Si substrate has been conducted. High-quality ZnO nanowires with c-axis orientation and perfect crystalline structures with appropriate chemical stoichiometry have been obtained ...
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In this work, a comparative performance analysis of ZnO nanowires grown by following single- and double-step techniques on (100) p-Si substrate has been conducted. High-quality ZnO nanowires with c-axis orientation and perfect crystalline structures with appropriate chemical stoichiometry have been obtained from both the approaches. The areal density of the nanowires grown from double step approach is almost twice the nanowires grown by employing the single step approach. Histogram analysis shows that the diameter and height of majority of the single-step grown nanowires are ~370nm and ~2.45µm, and for the double step grown nanowires these are ~210 nm and ~2.16 µm, respectively. The bandgap values of the single-step and double-step grown nanowires are measured to 3.19eV and 3.26eV, respectively. The current-voltage characteristics of p-Si/n-ZnO diodes indicate that the forward current is contributed by both the electrons and holes and the relevant cut-in voltages are measured to be 0.5V and 2.5V, respectively.
Anindita Das; Sanatan Chattopadhyay; Goutam Kumar Dalapati
Abstract
In the current work, electrical performance of n-channel GaAs MOSFETs with HfO2 gate dielectrics has been investigated by considering the impact of oxygen diffusion from gate dielectric layer. Initially, the HfO2/GaAs MOS capacitors are fabricated and its relevant process recipe has been simulated. The ...
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In the current work, electrical performance of n-channel GaAs MOSFETs with HfO2 gate dielectrics has been investigated by considering the impact of oxygen diffusion from gate dielectric layer. Initially, the HfO2/GaAs MOS capacitors are fabricated and its relevant process recipe has been simulated. The key parameters are extracted from both the experimental and simulated results to calibrate the simulator. The extracted parameters are subsequently fed into the simulator to investigate electrical performance of n-channel GaAs MOSFETs with varying gate lengths. The elemental diffusion of oxygen at HfO2/GaAs interface has also been incorporated since oxygen naturally diffuses into the GaAs layer during deposition and annealing steps and thereby alters the effective doping concentration in the channel. The diffused oxygen has been observed to improve electrical performance parameters such as transconductance and threshold voltage, however, degrades DIBL of the HfO2/GaAs MOSFET devices.