Shankar Dutta; Ramjay Pal;Ratnamala Chatterjee
Abstract
This paper discussed about the integration issues of Pb (Zr0.52Ti0.48) O3 – BiFeO3 (PZT - BFO) multilayer thin film deposited on silicon substrate for possible application in future micro-electro-mechanical system (MEMS) devices. The PZT - BFO multilayer thin film is deposited on silicon wafer ...
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This paper discussed about the integration issues of Pb (Zr0.52Ti0.48) O3 – BiFeO3 (PZT - BFO) multilayer thin film deposited on silicon substrate for possible application in future micro-electro-mechanical system (MEMS) devices. The PZT - BFO multilayer thin film is deposited on silicon wafer by sol-gel technique. The multilayer film is annealed at 650 °C in air for 60 min. The deposited multilayer film is found to be polycrystalline in nature. The PZT-BFO multilayer exhibited room temperature multiferroic properties (remnant polarization of 37 mC/ cm 2 and remnant magnetization of 3.1 emu / cm 3 ). To fabricate the PZT - BFO multiferroic cantilever structures, a two-mask process flow is developed. Etch rates of the PZT - BFO multilayer (180 nm/ min), ZrO2 buffer layer (35 nm/ min) and SiO2 layer (350 nm/ min) are optimized in CHF3 plasma. The multiferroic cantilever structures are released by isotropic etching of silicon using SF6 plasma. Bending and cracks are observed in the released cantilever structures due to the generation of residual stress in the multilayer thin film. Effect of residual stress on the PZT - BFO cantilever structure is also verified by simulation.
Govind N. Sharma; Shankar Dutta; Ratnamala Chatterjee; Sushil Kumar Singh
Abstract
Metal oxide based hetero-structures (like Pb (ZrxTi1-x) O3 – ZnO) can be used for wide variety of future sensors and electronic devices. This paper presents growth and electrical properties of nano-textured (110) Pb (Zr0.52Ti0.48) O3/ (001) ZnO hetrostructure on oxidized silicon substrate by RF ...
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Metal oxide based hetero-structures (like Pb (ZrxTi1-x) O3 – ZnO) can be used for wide variety of future sensors and electronic devices. This paper presents growth and electrical properties of nano-textured (110) Pb (Zr0.52Ti0.48) O3/ (001) ZnO hetrostructure on oxidized silicon substrate by RF sputtering technique. The grain sizes of ZnO and PZT films are found to be around 30 nm and 80 nm respectively. Resistivity of the ZnO layer is found to be 1x10 9 ?-cm. The electrical properties of the film are studied by creating in-plane electrodes on top of the PZT/ZnO hetrostructure film. The remnant polarization of the film is found ~ 47 µC/ cm 2 at 200 kV/ cm 2 . Dielectric constant of the film is found to be 300 at 1 kHz. The film also showed a low leakage current density of ~ 10 -5 A/cm 2 at 200 kV/ cm applied electric field. The nano-textured (110) Pb (Zr0.52Ti0.48) O3/ (100) ZnO hetrostructure integrated with inter-digital-transducers and microelectronic is well suitable for low-cost, robust, programmable passive micro sensors for military structure and systems such as aircraft, missiles.
Akhilesh Pandey; Shankar Dutta; Anand Kumar; R. Raman; Ashok K. Kapoor; R Muralidhran
Abstract
Molybdenum-di-sulfide (MoS2) is being considered as an alternative 2-D material to graphene. Deposition of ultrathin MoS2 layer from bulk MoS2 sample is an important criterion in determining the viability of its application. This paper discusses about growth and characterization of bulk MoS2 pellet ...
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Molybdenum-di-sulfide (MoS2) is being considered as an alternative 2-D material to graphene. Deposition of ultrathin MoS2 layer from bulk MoS2 sample is an important criterion in determining the viability of its application. This paper discusses about growth and characterization of bulk MoS2 pellet from MoS2 powder and exfoliation of MoS2 layer from it. The MoS2 pellets were sintered at different temperatures (500 - 850 ° in nitrogen atmosphere. The sintered samples were found to be polycrystalline in nature with hexagonal flakes of 100 nm – 1.0 µm sizes. In addition to MoS2 phase, surface of the bulk samples also has also some MoO3 phase content, which was found to decrease with the increase in sintering temperature, confirmed by XRD. The optical absorption study showed MoS2 absorptions around 1.82 eV, 2.01 eV due to spin orbit and direct band to band absorption from ?k-k valley. The sintered MoS2 samples were found to have characteristic Raman peaks of A1g and E2g with a separation of 26.5 cm -1 . Ultrathin MoS2 layers, exfoliated from the sintered sample, showed the reduced separation between Raman peaks A1g and E2g of 24.5 cm -1 few layer MoS2.