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80 MeV Carbon Ion Irradiation Effects On Advanced 200 GHz Silicon-germanium Heterojunction Bipolar Transitors

N.H. Vinayakprasanna; K.C. Praveen; N. Pushpa; Ambuj Tripathi; John D Cressler; A.P. Gnana Prakash

Volume 6, Issue 2 , February 2015, , Pages 120-126

https://doi.org/10.5185/amlett.2015.5708

Abstract
  The total dose effects of 80 MeV carbon ions and 60 Co gamma radiation in the dose range from 1 Mrad to 100 Mrad on advanced 200 GHz Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) are investigated. The stopping and range of ions in matter (SRIM) simulation study was conducted to understand ...  Read More