V. Thiruvengadam; Braj Bhusan Singh; Palash Kumar Manna; Subhankar Bedanta
Abstract
Molybdenum disulfide (MoS2) is one among the transition-metal dichalcogenide (TMD) family which exhibits exotic physical properties at their mono-layer limit. We report a facile way to fabricate stoichiometric, crystalline and star shaped MoS2 film. In this work, ultra-thin MoS2 films were fabricated ...
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Molybdenum disulfide (MoS2) is one among the transition-metal dichalcogenide (TMD) family which exhibits exotic physical properties at their mono-layer limit. We report a facile way to fabricate stoichiometric, crystalline and star shaped MoS2 film. In this work, ultra-thin MoS2 films were fabricated by two step process (i) RF sputtering of MoS2 target followed by (ii) sulfurization to improve stoichiometry and crystallinity. In order to study the effect of sulfurization temperature on sputtered MoS2, sulfurization has been performed at five different temperatures - 700, 750, 775, 800 and 825°C. Surface morphology of as sputtered and sulfurized MoS2 films were characterized using optical and scanning electron microscopes. Crystallinity and layer thickness of the fabricated MoS2 films were estimated by using Laser Raman spectroscopy. These results confirm that as sputtered MoS2 films are discontinuous, amorphous in nature and it crystalizes into a layered structure during sulfurization at temperature ≥ 750°C. It was observed that at sulfurization temperature of 800°C, the nucleated crystallites well grown into a star shaped crystalline MoS2 with their thickness vary between 2 and 3 mono-layers. These star shapes can provide more surface area/edges that can be exploited to enhance the efficiency of gas sensors.
Jitendra Pal Singh; Sanjeev Gautam; Braj Bhusan Singh; Sujeet Chaudhary; D. Kabiraj; D. Kanjilal; K. H. Chae; R. Kotnala; Jenn-Min Lee; Jin-Ming Chen; K. Asokan
Abstract
MgO based magnetic tunnel junctions (MTJs) exhibit high tunneling magnetoresistance (TMR) and have potential applications in magnetic random access memories. This study addresses the role of interface in the Fe/MgO/Fe based MTJs. For present investigation, Fe/MgO/Fe multilayer stack on Si substrates ...
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MgO based magnetic tunnel junctions (MTJs) exhibit high tunneling magnetoresistance (TMR) and have potential applications in magnetic random access memories. This study addresses the role of interface in the Fe/MgO/Fe based MTJs. For present investigation, Fe/MgO/Fe multilayer stack on Si substrates is grown by electron beam evaporation method and has been investigated for structural, magnetic and electronic properties. All the layers in the stack were of polycrystalline in nature as evidenced from X-ray diffraction studies, and the magnetic measurements show the attributes perpendicular magnetic anisotropy. Results from near edge X-ray absorption spectra at Fe L-edges measured by total electron yield mode and X-ray reflectometry indicate the formation of FeOx at the Fe/MgO interface. These are associated with hybridization of Fe (3d)-O(2p) levels at Fe/MgO interface in the stack and thickness of layers in the stacks. Absence of magnetic de-coupling between top and bottom ferromagnetic layers has been attributed to interface roughness and oxidation at Fe/MgO interface. This study highlights the role of interface and oxidation that need to be considered for improving the TMR for devices.
