Anindita Das; Sanatan Chattopadhyay; Goutam Kumar Dalapati
Abstract
In the current work, electrical performance of n-channel GaAs MOSFETs with HfO2 gate dielectrics has been investigated by considering the impact of oxygen diffusion from gate dielectric layer. Initially, the HfO2/GaAs MOS capacitors are fabricated and its relevant process recipe has been simulated. The ...
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In the current work, electrical performance of n-channel GaAs MOSFETs with HfO2 gate dielectrics has been investigated by considering the impact of oxygen diffusion from gate dielectric layer. Initially, the HfO2/GaAs MOS capacitors are fabricated and its relevant process recipe has been simulated. The key parameters are extracted from both the experimental and simulated results to calibrate the simulator. The extracted parameters are subsequently fed into the simulator to investigate electrical performance of n-channel GaAs MOSFETs with varying gate lengths. The elemental diffusion of oxygen at HfO2/GaAs interface has also been incorporated since oxygen naturally diffuses into the GaAs layer during deposition and annealing steps and thereby alters the effective doping concentration in the channel. The diffused oxygen has been observed to improve electrical performance parameters such as transconductance and threshold voltage, however, degrades DIBL of the HfO2/GaAs MOSFET devices.
Yoshiaki Hirano; Katsutoshi Ooe; Kazuyoshi Tsuchiya; Tomohiro Hosokawa; Kazuto Koike; Shigehiko Sasa
Abstract
A health monitoring system (HMS) involving a blood extraction device with a new type of hybrid biosensor comprising an enzyme and a semiconductor has recently been developed. A MOSFET was used as the transducer. The gate electrode was extracted from the MOSFET using a cable. Gold (Au)-plate-immobilized ...
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A health monitoring system (HMS) involving a blood extraction device with a new type of hybrid biosensor comprising an enzyme and a semiconductor has recently been developed. A MOSFET was used as the transducer. The gate electrode was extracted from the MOSFET using a cable. Gold (Au)-plate-immobilized glucose oxidase (Go) was used as a biosensor and attached to the gate electrode. Go was immobilized on a self-assembled spacer combined with an Au electrode by the cross-link method using BSA as an additional bonding material. The electrode could be used to detect electrons generated by the oxidization of hydrogen peroxide produced by the reaction between Go and glucose using the constant electric current measurement system of the MOSFET-type hybrid biosensor. The sensitivities for the diluted whole blood and blood plasma were 61.4 and 171.2 V/(mol/L), respectively. The hybrid biosensor was useful for HMS.