Govind N. Sharma; Shankar Dutta; Ratnamala Chatterjee; Sushil Kumar Singh
Abstract
Metal oxide based hetero-structures (like Pb (ZrxTi1-x) O3 – ZnO) can be used for wide variety of future sensors and electronic devices. This paper presents growth and electrical properties of nano-textured (110) Pb (Zr0.52Ti0.48) O3/ (001) ZnO hetrostructure on oxidized silicon substrate by RF ...
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Metal oxide based hetero-structures (like Pb (ZrxTi1-x) O3 – ZnO) can be used for wide variety of future sensors and electronic devices. This paper presents growth and electrical properties of nano-textured (110) Pb (Zr0.52Ti0.48) O3/ (001) ZnO hetrostructure on oxidized silicon substrate by RF sputtering technique. The grain sizes of ZnO and PZT films are found to be around 30 nm and 80 nm respectively. Resistivity of the ZnO layer is found to be 1x10 9 ?-cm. The electrical properties of the film are studied by creating in-plane electrodes on top of the PZT/ZnO hetrostructure film. The remnant polarization of the film is found ~ 47 µC/ cm 2 at 200 kV/ cm 2 . Dielectric constant of the film is found to be 300 at 1 kHz. The film also showed a low leakage current density of ~ 10 -5 A/cm 2 at 200 kV/ cm applied electric field. The nano-textured (110) Pb (Zr0.52Ti0.48) O3/ (100) ZnO hetrostructure integrated with inter-digital-transducers and microelectronic is well suitable for low-cost, robust, programmable passive micro sensors for military structure and systems such as aircraft, missiles.
D. Ambika; V. Kumar; K. Tomioka; Isaku Kanno
Abstract
Pb(ZrxTi1-x)O3 [PZT] thin films of morphotropic phase boundary (MPB) composition having {001}, {110}, and {111}-orientations were fabricated on silicon substrates (111)Pt/Ti/SiO2/Si using a metal organic decomposition spin-coating technique. The influence of crystallographic orientation on the transverse ...
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Pb(ZrxTi1-x)O3 [PZT] thin films of morphotropic phase boundary (MPB) composition having {001}, {110}, and {111}-orientations were fabricated on silicon substrates (111)Pt/Ti/SiO2/Si using a metal organic decomposition spin-coating technique. The influence of crystallographic orientation on the transverse piezoelectric coefficient e31 * of the films have been determined. The largest e31* was found in {110}-oriented film. The differences observed in e31 * have been explained on the basis of domain wall contributions which are dependent on film texture. The influence of thin film texture on polarization switching characteristics have also been studied.
Arun Chamola; Hemant Singh; U.C. Naithani; Shubhash Sharma; Uday Prabhat; Pratiksha Devi; Anuradha Malik; Alok Srivastava; R.K. Sharma
Abstract
In the present work, structural, dielectric and electrical properties of lead zirconate titanate and CaCu3Ti4O12 ceramic composite with composition (1-x)Pb(Zr0.65Ti0.35)O3 - xCaCu3Ti4O12 (where x = 0, 0.20, 0.40 and 0.60) has been reported. The sample was prepared by employing a high-temperature solid-state ...
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In the present work, structural, dielectric and electrical properties of lead zirconate titanate and CaCu3Ti4O12 ceramic composite with composition (1-x)Pb(Zr0.65Ti0.35)O3 - xCaCu3Ti4O12 (where x = 0, 0.20, 0.40 and 0.60) has been reported. The sample was prepared by employing a high-temperature solid-state reaction technique. X-ray diffraction studies confirm the formation of pure phase for x = 0.00 concentration and composite phases for the x = 0.40, 0.60 compositions. Doublet of diffraction peaks suggests structural change for x = 0.20 composition. Scanning electron micrographs show a uniform grain distribution and the grain size and shape modified upon CaCu3Ti4O12 addition. Dielectric measurement demonstrates a decrease in the dielectric constant with increase in CaCu3Ti4O12 percentage. The prepared ceramic composites have high dielectric constant and low dielectric loss. The temperature dependence of the ac conductivity indicated that the conduction process is due to singly ionized (in ferroelectric region) and doubly ionized (in paraelectric region).